Characteristics of a 1200 V PT IGBT with trench gate and local life time control
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (01972618) , 811-816
- https://doi.org/10.1109/ias.1998.730239
Abstract
A new 1200 V IGBT with a V/sub CE/(sat) of 1.9 V at 125/spl deg/C and 140 A/cm/sup 2/ has been developed using a trench gate PT (punch-through) structure and local life time control. Compared to state-of-the-art third generation planar devices, this device represents a 30% improvement of on-state losses at almost twice the current density. This paper describes the structure and characteristics of this new IGBT.Keywords
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