TbOF complex centers in ZnS thin-film electroluminescent devices
- 22 August 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (8) , 678-680
- https://doi.org/10.1063/1.99848
Abstract
The effect of oxygen doping in ZnS:TbF thin‐film electroluminescent (EL) devices has been studied. We concluded that the TbOF complex center is more efficient than the TbF complex center in ZnS thin‐film EL devices. The improvement is attributed to the decreased nonradiative emission process of Tb and/or enlarged lattice distortions which generate electron‐hole pairs efficiently at the Tb excitation site.Keywords
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