Resonant Raman Scattering in a Semiconductor Superlattice
- 20 December 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 37 (25) , 1701-1704
- https://doi.org/10.1103/physrevlett.37.1701
Abstract
We report the observation of enhancement in the Raman cross section for photon energies near electronic resonance in superlattices of a variety of configurations. Both the energy positions and the general shape of the resonant curves agree with those derived theoretically based on the two-dimensionality of the quantum states in such superlattices. Polarization studies indicate a major contribution to the scattering from forbidden processes.
Keywords
This publication has 8 references indexed in Scilit:
- Smooth and coherent layers of GaAs and AlAs grown by molecular beam epitaxyApplied Physics Letters, 1976
- Effects of Quantum States on the Photocurrent in a "Superlattice"Physical Review Letters, 1975
- Direct Observation of Superlattice Formation in a Semiconductor HeterostructurePhysical Review Letters, 1975
- Optical properties of semiconductor superlatticeJournal of Applied Physics, 1975
- The Growth of a GaAs–GaAlAs SuperlatticeJournal of Vacuum Science and Technology, 1973
- Theory of the One-Phonon Resonance Raman EffectPhysical Review B, 1971
- The Raman effect in crystalsAdvances in Physics, 1964
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962