Normally-off InGaAs junction field-effect transistor with InGaAs buffer layer

1 August 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (8) , 353-354
https://doi.org/10.1109/edl.1987.26657

Abstract

InGaAs junction field-effect transistors (JFET's) with 1-µm gate length were successfully fabricated with an n⁺-InGaAs active layer (8 × 10¹⁶cm^-3) and an undoped InGaAs buffer layer grown on semi-insulating InP:Fe substrate by liquid-phase epitaxy. The device showed good pinch-off behavior with a threshold voltage of 0.25 V, a low drain current of 1 µA at zero gate-source voltage, and a very high transconductance of 553 mS/mm at room temperature. This is one of the highest transconductance values ever reported for a 1-µm gate-length FET.

Keywords

INDIUM GALLIUM ARSENIDE
FETS
BUFFER LAYERS
SUBSTRATES
THRESHOLD VOLTAGE
TRANSCONDUCTANCE
INSULATION
DIELECTRIC LIQUIDS
EPITAXIAL GROWTH
EPITAXIAL LAYERS