18.7% efficient (1-sun, AM0) large-area GaAs solar cells
- 15 April 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (8) , 776-778
- https://doi.org/10.1063/1.95927
Abstract
AlGaAs-GaAs heteroface solar cells with areas of 4 cm2 have been fabricated by metalorganic chemical vapor deposition. One-sun, AM0 efficiencies as high as 18.7% and 18.4% have been obtained for p-n and n-p structures, respectively. Both kinds of cell structures are characterized by excellent external quantum efficiencies and their performance is close to that predicted by a realistic computer model. In agreement with the computer model, the n-p cell exhibits a higher short-circuit current density because of its thin, n-type top absorber.Keywords
This publication has 2 references indexed in Scilit:
- The growth of Magnesium-doped GaAs by the Om-Vpe processJournal of Electronic Materials, 1983
- High-efficiency AlGaAs/GaAs concentrator solar cellsApplied Physics Letters, 1979