Suspending highly doped silicon-on-insulator wires for applications in nanomechanics
- 1 December 1999
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 10 (4) , 418-420
- https://doi.org/10.1088/0957-4484/10/4/310
Abstract
We report on a new method to build suspended silicon nanowires in highly doped silicon films in silicon-on-insulator substrates. The beams are defined by high-resolution, low-energy electron-beam lithography using a two-layer positive electron resist. Micromachining techniques including dry and wet etching are applied to pattern the structures. We show first low-temperature measurements of these novel devices indicating electron-phonon interaction.Keywords
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