High-frequency InGaAs/InP multiple-quantum-well buried-mesa electroabsorption optical modulator

4 June 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (12) , 621-622
https://doi.org/10.1049/el:19870445

Abstract

We describe the structure and performance characteristics of an InGaAs/InP multiple-quantum-well (MQW) electro-absorption buried-mesa optical modulator. The device is fabricated with two metal-organic chemical-vapour-deposition (MOCVD) growth steps, wherein small-area circular (40μm diameter) PIN diodes are buried with Fe-doped semiinsulating (SI) InP regrowth. The modulator has a relatively low insertion loss (4.5 dB) with 25% modulation depth and very high modulation bandwith (5.3 GHz) operating at 1.62μm wavelength.

Keywords

MODULATION BANDWITH
ELECTROABSORPTION OPTICAL MODULATOR
MULTIPLE-QUANTUM-WELL BURIED-MESA
1.62 MICRON
INSERTION LOSS
5.3 GHZ
OPTICAL COMMUNICATION DEVICE
PIN DIODES
METAL-ORGANIC CHEMICAL-VAPOUR-DEPOSITION
INGAAS-INP
4.5 DB
ELECTRO-OPTICAL DEVICE
40 MICRON
MOCVD
MQW
HF OPERATION
III-V SEMICONDUCTORS
SEMIINSULATING INP:FE REGROWTH

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