Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- 1 July 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (7B) , L990
- https://doi.org/10.1143/jjap.31.l990
Abstract
We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.Keywords
This publication has 4 references indexed in Scilit:
- Picosecond excitonic absorption recovery of 100 nm GaAs/AlGaAs narrow multiple quantum-well wiresApplied Physics Letters, 1991
- Band-mixing effects and excitonic optical properties in GaAs quantum wire structures-comparison with the quantum wellsIEEE Journal of Quantum Electronics, 1988
- Dot lithography for zero-dimensional quantum wells using focused ion beamsApplied Physics Letters, 1987
- Optical spectroscopy of ultrasmall structures etched from quantum wellsApplied Physics Letters, 1986