Physical mechanisms of bandgap-narrowing in silicon
- 7 July 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (14) , 515-516
- https://doi.org/10.1049/el:19830350
Abstract
Experimental evidence of lattice damage strain-induced bandgap-narrowing is given. This effect is used to explain some of the discrepancies between various bandgap-narrowing values published so far.Keywords
This publication has 0 references indexed in Scilit: