Optogalvanic study of photodetachment ofOnear threshold

Abstract
An optogalvanic signal due to the photodetachment of O has been successfully observed using an rf discharge. This signal is shown to be proportional to the photodetachment cross section. The transition strengths determined for various fine-structure levels agree well with the predictions by Rau and Fano [Phys. Rev. A 4, 1751 (1971)]. An optogalvanic signal due to the photodetachment of O2 has also been observed.

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