Monolithic integration of InGaAs/InP PIN PD with MISFET on stepless substrate

5 June 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (12) , 652-653
https://doi.org/10.1049/el:19860446

Abstract

A low-dark-current (1–2 nA) InGaAs/InP single-heterostructure planar PIN PD was fabricated and integrated with an InP MISFET on stepless substrates. The characteristics of the PIN PD did not change with integration.

Keywords

PHOTODIODE
MONOLITHIC INTEGRATION
STEPLESS SUBSTRATE
INGAAS/INP
MISFET
INP MISFET
LOW-DARK-CURRENT
PLANAR PIN
INTEGRATED OPTOELECTRONICS
SINGLE-HETEROSTRUCTURE
P-I-N DEVICE
III-V SEMICONDUCTORS