Pentavacancies in plastically deformed silicon

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Abstract
High‐pressure/low‐temperature plastic deformation of silicon leads to the appearance of new electron spin resonance active centers. One of them could be identified to be the pentavacancy Si‐P1, which also can be produced by irradiation. Depending on the deformation axis the defect occurs in several homologous orientations. Spin‐lattice relaxation time measurements performed on both plastically deformed and neutron‐irradiated silicon show the existence of an Orbach‐type relaxation with an activation energy of about 23 meV corresponding to the thermal excitation energy of the resonant electron into its high‐temperature state.