Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure
- 19 December 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (25) , 3266-3268
- https://doi.org/10.1063/1.112432
Abstract
We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2Keywords
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