Switching characteristics of amorphous silicon Schottky barrier diodes
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 1175-1178
- https://doi.org/10.1016/0022-3093(83)90377-0
Abstract
No abstract availableFunding Information
- Grains Research and Development Corporation
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 4 references indexed in Scilit:
- The characteristics and properties of optimised amorphous silicon field effect transistorsApplied Physics A, 1983
- Study of the electronic structure of amorphous silicon using reverse-recovery techniquesApplied Physics Letters, 1982
- Application of amorphous silicon field effect transistors in addressable liquid crystal display panelsApplied Physics A, 1981
- Amorphous-silicon image sensor ICIEEE Electron Device Letters, 1980