Correlation of the anisotropic etching of single−crystal silicon spheres and wafers
- 1 April 1975
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (4) , 1478-1483
- https://doi.org/10.1063/1.321787
Abstract
Studies of the anisotropic etching of silicon single−crystal wafers and spheres were conducted using 10−M potassium hydroxide as the etchant. The etch rates along the major slow−etch directions were measured. The sides of circular mesas etched into (111), (110), and (100) wafers were found to be inclined to the wafer surface. The angles of inclination varied with azimuthal position and could be correlated with the slow−etch directions measured from an etched sphere. A method was developed to predict these angles of inclination for surfaces of varied orientation using the rate of etching data and angular measurements from an etched sphere.This publication has 6 references indexed in Scilit:
- Ledge Formation on the (111) Surface of CopperJournal of the Electrochemical Society, 1966
- The microscopic kinetics of step motion in growth processesJournal of Physics and Chemistry of Solids, 1963
- Use of Modified Free Energy Theorems to Predict Equilibrium Growing and Etching ShapesJournal of Applied Physics, 1962
- Orientation-Dependent Dissolution of Lithium FluorideJournal of Applied Physics, 1961
- Orientation-Dependent Dissolution of GermaniumJournal of Applied Physics, 1960
- Hillocks, Pits, and Etch Rate in Germanium CrystalsJournal of Applied Physics, 1957