Ultra-low temperature OMVPE of InAs and InAsBi
- 1 February 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (2) , 143-148
- https://doi.org/10.1007/bf02655829
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Organometallic vapor-phase epitaxy growth and characterization of Bi-containing III/V alloysJournal of Applied Physics, 1990
- MOMBE of InAs on GaAsJournal of Crystal Growth, 1990
- Photoluminescence of InAsBi and InAsSbBi grown by organometallic vapor phase epitaxyJournal of Applied Physics, 1990
- Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBiApplied Physics Letters, 1989
- Infrared photoluminescence of InAs epilayers grown on GaAs and Si substratesJournal of Applied Physics, 1989
- Dislocation density of lattice mismatched epitaxial layersJournal of Crystal Growth, 1989
- Growth and characterization of compound semiconductors by atomic layer epitaxyJournal of Crystal Growth, 1986
- Thin InAs epitaxial layers grown on (100) GaAs substrates by molecular beam depositionApplied Physics Letters, 1978
- Molecular Beam Epitaxial Growth of InAsJapanese Journal of Applied Physics, 1977
- Energy Levels of Direct Excitons in Semiconductors with Degenerate BandsPhysical Review B, 1971