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Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy
Home
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Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy
Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy
HS
H. Sunamura
H. Sunamura
N. Usami
N. Usami
Y. Shiraki
Y. Shiraki
SF
S. Fukatsu
S. Fukatsu
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29 May 1995
journal article
Published by
AIP Publishing
in
Applied Physics Letters
Vol. 66
(22)
,
3024-3026
https://doi.org/10.1063/1.114265
Abstract
No abstract available
Keywords
ELECTRON BEAM
QUANTUM WELL
KINETICS
TRANSMISSION ELECTRON MICROSCOPY
THERMAL STABILITY
SURFACE ROUGHNESS
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