Short-channel effects in MOSFET's at liquid-Nitrogen temperature

1 July 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 33 (7) , 1012-1019
https://doi.org/10.1109/T-ED.1986.22607

Abstract

Short-channel or high-field effects in MOSFET devices are a continuing area of research in room-temperature devices. Much has been learned in the past several years about the physical origins of these effects, and new or modified device structures have been proposed to minimize them. Because of the improved device and circuit performance possible at liquid-nitrogen temperature (LN2), there has been considerable recent interest in low-temperature device physics. While large-geometry MOSFET behavior has been discussed in the literature at LN2, very little has been quantified regarding short-channel effects at low temperature. This paper addresses the physical origins of short-channel effects at these temperatures. It is concluded that while the physical mechanisms are similar to those at room temperature, quantitative differences exist that favor LN2operation.

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