Hot-carrier effects in fully depleted submicrometer NMOS/SIMOX as influenced by back interface degradation
- 1 October 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (10) , 522-524
- https://doi.org/10.1109/55.192821
Abstract
From a systematic study of the hot-carrier-induced degradation in fully depleted submicrometer NMOS/SIMOX as a function of front- and back-gate biases during stress, the authors found that the apparent changes of the front-channel transistor parameters, measured at grounded back gate, could be largely attributed to the virtual back-gate bias effect arising from the trapped charge in the buried oxide. The strong dependence of carrier injection at the back interface on the back-gate bias and its resulting effect on the front-channel transistor parameters are also presented.<>Keywords
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