High intensity magnetic fields for the identification and study of donors in epitaxial gallium arsenide
- 1 September 1980
- journal article
- research article
- Published by Springer Nature in International Journal of Infrared and Millimeter Waves
- Vol. 1 (3) , 513-524
- https://doi.org/10.1007/bf01007330
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Reliable far-infrared photoconductivity method to identify a variety of residual donors in epitaxial GaAsInternational Journal of Infrared and Millimeter Waves, 1980
- High-precision dielectric measurements on liquids and solids at millimeter and submillimeter wavelengthsIEEE Transactions on Instrumentation and Measurement, 1976
- New techniques for dispersive Fourier transform spectrometry of liquidsInfrared Physics, 1976
- Stark effect on donor transitions in high-purity GaAsSolid State Communications, 1973
- "Mass Anomaly" in the Zeeman Effect of GaAs DonorLevelsPhysical Review Letters, 1971