Thermoelecric Effect in Semiconducting Barium Titanate
- 1 July 1969
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 8 (7)
- https://doi.org/10.1143/jjap.8.883
Abstract
Thermoelectric measurements were carried out on polycrystalline semiconducting barium titanate systems. Doping elements used were erbium and terbium. The ambient temperature of the samples was varied from room temperature to 200°C. It was found that the thermoelectric power changes its sign beyond the transition temperature and becomes positive, even though the carrier concentration remains constant. A possible mechanism based on the idea of electron-phonon Umklapp process has been suggested to explain this reversal of sign.Keywords
This publication has 4 references indexed in Scilit:
- Electrical Properties of Ag-Doped Barium Titanate CeramicsJapanese Journal of Applied Physics, 1965
- Semiconductive Single Crystal of BaTiO3 Reduced in Hydrogen AtmosphereJournal of the Physics Society Japan, 1964
- Investigation of Rare‐Earth Doped Barium TitanateJournal of the American Ceramic Society, 1961
- Properties of Semiconductive Barium TitanatesJournal of the Physics Society Japan, 1959