Direct evidence for defect conduction at interfacebetween gallium nitrideand sapphire
- 6 July 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (14) , 1237-1239
- https://doi.org/10.1049/el:20000902
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurementsApplied Physics Letters, 1997
- Emerging gallium nitride based devicesProceedings of the IEEE, 1995
- Electron transport mechanism in gallium nitrideApplied Physics Letters, 1993