Preparation and Optical Properties of InAs1−xPx Alloys

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Abstract
Homogeneous polycrystalline InAs1−xPx alloys have been prepared by a halogen vapor‐transport closed‐tube technique over the entire range of composition. Electroreflectance measurements were made at room temperature by the electrolyte method which showed that the E1 and E1+Δ1 transition energies vary in a concave upwards manner, while the E0′, E2, and E2+δ transition energies vary linearly with composition. Wavelength‐modulated reflectance measurements on semiconducting alloys above the fundamental edge are reported for the first time. These data, taken at room and liquid‐nitrogen temperatures, confirm the interpretation placed on the variation of the electroreflectance E1 peaks. The E1 spin‐orbit splitting (Δ1) remains almost constant in energy as x is increased from InAs and then falls rapidly to the InP value. A similar shape is obtained for Δ1 from a k·p calculation for the alloy band structure, which shows that a movement of the transitions in k space is probably responsible for this behavior.