Mössbauer study of119Sn defects in silicon from ion implantations of radioactive119In
- 1 January 1979
- journal article
- Published by Springer Nature in Hyperfine Interactions
- Vol. 7 (1) , 449-453
- https://doi.org/10.1007/bf01021527
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- New techniques at ISOLDE-2Nuclear Instruments and Methods, 1976
- Covalency effects on implanted119Sn in group IV semiconductors studied by Mössbauer and channeling experimentsHyperfine Interactions, 1975
- Direct comparison of Mössbauer and channeling studies of implanted119sn in silicon single crystalsRadiation Effects, 1975