The schottky-barrier of GaAs(110)-Sb studied by UV photoemission
- 31 December 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 56 (11) , 1001-1004
- https://doi.org/10.1016/s0038-1098(85)80044-2
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Chemisorption of oxygen at cleaved GaAs(110) surfaces: Photon stimulation and chemisorption statesSurface Science, 1984
- Schottky Barrier Heights and the Continuum of Gap StatesPhysical Review Letters, 1984
- Oxygen and hydrogen adsorption on GaAs(110)Journal of Vacuum Science & Technology B, 1983
- Schottky barrier formation of Ag on GaAs(110)Journal of Vacuum Science & Technology B, 1983
- Ultraviolet photoelectron spectroscopy investigation of electron affinity and polarity on a cylindrical GaAs single crystalPhysical Review B, 1983
- Electron states of an Sb-ordered overlayer on GaAs(110)Physical Review B, 1983
- Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)--Sb(1 ML)Physical Review B, 1982
- LEED-AES-TDS characterization of Sb overlayers on GaAs(110)Surface Science, 1982
- Schottky barriers: An effective work function modelApplied Physics Letters, 1981
- Theory of Surface StatesPhysical Review B, 1965