A novel planarization technique for optoelectronic integrated circuits and its application to a monolithic AlGaAs/GaAs p-i-n FET
- 1 February 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (2) , 241-246
- https://doi.org/10.1109/t-ed.1987.22913
Abstract
A new planarization technique for use in fabricating optoelectronic integrated circuits (OEIC's) has been developed. The conditions of substrate preparation and ion-beam etching to obtain a perfectly planar, embedded structure have been analyzed in detail. This process has been successfully applied to monolithically integrate an AlGaAs/GaAs p-i-n FET photoreceiver. These results indicate that this planarization technique is useful for fabricating OEIC's including large-scale integrated receivers and transmitters.Keywords
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