An assessment is presented of the inherent properties of GaAs FET technology which qualify its application to large scale integration. Although the processing technology is not advanced to produce the described optimum logic gate configuration, it is demonstrated that 1 µm channel length FET's produce delay-power products of less than 100 femto-Joules, a prerequisite for LSI. Several exploratory designs will be discussed which have achieved gigabit data rate handling capability not accessible with Si device technology.