Schottky Barrier Diodes of n ‐ BP ‐ Au

1 June 1989

journal article
Published by The Electrochemical Society in Journal of the Electrochemical Society

Vol. 136 (6) , 1830-1831
https://doi.org/10.1149/1.2097033

Abstract

We have measured Schottky barrier contacts of Au on wafers grown by chemical vapor deposition and obtained the barrier height of ∼1.4 eV by capacitance techniques. The barrier height of is independent of metal and two‐thirds of energy bandgap, expected from the surface‐state model. It is convenient for device processes to use Au for both n‐ and p‐type .

Keywords

SCHOTTKY BARRIER
STATE MODEL
BARRIER HEIGHT
WAFERS GROWN
DEVICE PROCESSES
BARRIER CONTACTS
CAPACITANCE TECHNIQUES
USE AU

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