A study of surface cross-hatch and misfit dislocation structure in In 0.15Ga 0.85As GaAs
- 1 April 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 149 (1-2) , 1-11
- https://doi.org/10.1016/0022-0248(94)00669-5
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Pseudomorphic InGaAs high electron mobility transistorsThin Solid Films, 1993
- Surface morphology of related GexSi1−x filmsApplied Physics Letters, 1992
- Crosshatched surface morphology in strained III-V semiconductor filmsJournal of Applied Physics, 1990
- Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth areaJournal of Applied Physics, 1989
- Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayersJournal of Applied Physics, 1988
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs0.7P0.3 Substrate by LPEJapanese Journal of Applied Physics, 1987
- Misfit dislocations and the morphology of gallium aluminum arsenide epitaxial layers grown on gallium arsenideJournal of Applied Physics, 1981
- The effect of elastic strain on energy band gap and lattice parameter in III-V compoundsJournal of Applied Physics, 1978
- Interfacial lattice mismatch effects in III–V compoundsJournal of Crystal Growth, 1975
- A Cross-Hatch Pattern in GaAs[sub 1−x]P[sub x] Epitaxially Grown on GaAs SubstrateJournal of the Electrochemical Society, 1972