Nuclear Polarization by Hot Carrier Flow in Semiconductors

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Abstract
The nuclear polarization resulting from the interaction of the nuclei with a non‐equilibrium, steady‐state, distribution of hot conduction electrons generated by crossed static magnetic and strong electric fields is investigated theoretically. The effect of a strong electric field on the spin‐lattice relaxation times of the conduction electrons and the relaxation time of the nuclei by hyperfine interaction with hot carriers are considered for various types of semiconductors. Formulae for the field‐enhanced nuclear magnetization, and for the relaxation times of the electronic and nuclear magnetic moments, are obtained as functions of the current density of the conduction electrons.