Dotierungseigenschaften von Kobalt in Silizium
- 16 October 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 91 (2) , 649-659
- https://doi.org/10.1002/pssa.2210910236
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Eigenschaften der Energieniveaus von Kobalt in SiliziumPhysica Status Solidi (a), 1984
- Impurity states in cobalt-doped siliconJournal of Electronic Materials, 1978
- Influence of deep traps on the measurement of free-carrier distributions in semiconductors by junction capacitance techniquesJournal of Applied Physics, 1974
- Thermal emission rates and activation energies of electrons and holes at cobalt centers in siliconPhysica Status Solidi (a), 1972
- Excited Impurity States and Transient Photoconductivity in Cobalt-Doped SiliconPhysical Review B, 1971