Determination of the Parameters of Sensitizing Recombination Centres in CdS and CdSe Single Crystals by Temperature and Optical Quenching of Photocurrents

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Abstract
New stationary and kinetic methods are proposed for determining the parameters of sensitizing recombination r‐centres in high resistivity monopolar photoconductors. These methods are based on thermal and optical quenching of the photocurrent. These methods and those described previously [1 to 5] enable all the parameters of r‐centres in CdS, CdSe, and partially Cd(S, Se) to be determined. These parameters include the concentration and energy of the centres, and their cross sections for electron and hole capture. The method also gives the cross sections for absorption of photons with energies of 0.9 and 1.4 eV, these photons transfering a hole from an r‐centre to an excited level, and to the valence band respectively. The occupation of r‐centres by holes under weak illumination and the probabilities of hole capture by r‐ and s‐centres can be obtained.