Characteristics of lateral pn junctions grown on (100) GaAs patterned substrate

• 1 October 1996
• journal article
• research article
• Published by Springer Nature in Journal of Materials Science: Materials in Electronics
• Vol. 7  (5) , 315-319
• https://doi.org/10.1007/bf00185924

Abstract

Keywords

• SILICON
• GAAS
• ELECTRICAL PROPERTY
• MATERIAL PROCESSING
• GAAS SUBSTRATE