Comment on "Electronic effects on dislocation velocities in heavily doped silicon" by J. R. Patel, L. R. Testardi, and P. E. Freeland
- 15 April 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 15 (8) , 4121-4123
- https://doi.org/10.1103/physrevb.15.4121
Abstract
The influence of doping on the dislocation velocity in Si and Ge has been attributed to an effect of the line charge of the dislocation on the creation or motion of double kinks. A phenomenological theory of Patel et al. for this effect is criticized. It is pointed out that a microscopic theory by Haasen explains all the known facts.Keywords
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