Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge
- 1 May 1996
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 198-200, 987-990
- https://doi.org/10.1016/0022-3093(96)00016-6
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Stable hydrogenated amorphous silicon films deposited from silane and dichlorosilane by radio frequency plasma chemical vapor depositionApplied Physics Letters, 1995
- Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas MixturesJapanese Journal of Applied Physics, 1995
- Fast growth of hydrogenated amorphous silicon from dichlorosilaneApplied Physics Letters, 1994
- Stable a-Si:H fabricated from halogenous silane by ECR hydrogen plasmaJournal of Non-Crystalline Solids, 1993