High temperature Schottky diodes with boron-doped homoepitaxial diamond base
- 31 January 1990
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 25 (1) , 129-134
- https://doi.org/10.1016/0025-5408(90)90172-x
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond filmsApplied Physics Letters, 1988
- Crystallization of diamond crystals and films by microwave assisted CVD (Part II)Materials Research Bulletin, 1988
- High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamondIEEE Electron Device Letters, 1987
- Bipolar transistor action in ion implanted diamondApplied Physics Letters, 1982