Annealing behaviour of P-type layers formed by ion-implantation of gallium in silicon
- 27 January 1969
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 28 (8) , 558-560
- https://doi.org/10.1016/0375-9601(69)90105-4
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Anomalous penetration of Ga and In implanted in siliconPhysics Letters A, 1968
- The influence of temperature and channeling on ion-bombardment damage in SiCanadian Journal of Physics, 1968