Radiative recombination mechanisms in high brightness Nichia blue LEDs
- 1 February 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (2) , 155-157
- https://doi.org/10.1016/s0038-1101(97)82547-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodesJournal of Crystal Growth, 1994
- Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperatureApplied Physics Letters, 1994
- Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructureApplied Physics Letters, 1994
- Effect of Si on photoluminescence of GaNSolid State Communications, 1986
- Properties of Zn-doped VPE-grown GaN. I. Luminescence data in relation to doping conditionsJournal of Applied Physics, 1980
- Properties of Zn-doped GaN. I. PhotoluminescenceJournal of Applied Physics, 1974