Edge absorption and photoluminescence in closely compensated GaAs
- 31 January 1965
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 3 (1) , 9-13
- https://doi.org/10.1016/0038-1098(65)90159-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Infrared Transmission and Fluorescence of Doped Gallium ArsenidePhysical Review B, 1964
- Absorption Data of Laser-Type GaAs at 300° and 77°KJournal of Applied Physics, 1964
- Electroluminescence and Photoluminescence of GaAs at 77°KPhysical Review B, 1963
- EFFECT OF DOPING ON FREQUENCY OF STIMULATED AND INCOHERENT EMISSION IN GaAs DIODESApplied Physics Letters, 1963
- Transition processes in semiconductor lasersJournal of Physics and Chemistry of Solids, 1963
- BAND-FILLING MODEL FOR GaAs INJECTION LUMINESCENCEApplied Physics Letters, 1963
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962