Quarter micron low noise GaAs FET's
- 1 December 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (12) , 401-403
- https://doi.org/10.1109/EDL.1982.25614
Abstract
New quarter-micron gate GaAs MESFET's fabricated with optical lithography have yielded the best noise figures ever reported for FET's at frequencies between 12 and 32 GHz.Keywords
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