GaAs/AlGaAs directional coupler switch with submillimetre device length

6 November 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (23) , 1241-1243
https://doi.org/10.1049/el:19860851

Abstract

A GaAs/AlGaAs directional coupler switch, for the first time with a device length shorter than 1 mm, has been fabricated by utilising the good controllability of molecular beam epitaxy and reactive ion beam etching. The switching voltage is as low as 5V. The extinction ratio is 17dB for a crossover state and 14dB for a straight-through state.

Keywords

MOLECULAR BEAM EPITAXY
OPTICAL WAVEGUIDE COMPONENTS
OPTICAL COMMUNICATION EQUIPMENT
III-V SEMICONDUCTORS
SUBMILLIMETRE DEVICE LENGTH
5 V
ELECTRO-OPTICAL DEVICES
GAAS-ALGAAS
REACTIVE ION BEAM ETCHING
DIRECTIONAL COUPLER SWITCH
MBE
RIE

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