Radiative recombination lifetime measurements of InGaN single quantum well
- 23 September 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (13) , 1936-1938
- https://doi.org/10.1063/1.117627
Abstract
We present results from a time‐resolved study of radiative recombination in InGaN quantum wells. The sample was grown by atmospheric pressure metal‐organic chemical‐vapor deposition. Time‐resolved photoluminescence measurements were performed from 7 K up to room temperature. The low temperature radiative lifetime was measured to be on the order of 250 ps at a generated carrier density of 1012 cm−2. The time‐resolved measurements show a bimolecular recombination characteristic. At 300 K, we observed a lifetime of 130 ps which, to the best of our knowledge, is the longest lifetime reported for any III–V nitride at room temperature.Keywords
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