The effect of thermal processing on polycrystalline silicon/SiO2/6H–SiC metal-oxide-semiconductor devices
- 15 April 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (16) , 2231-2233
- https://doi.org/10.1063/1.115868
Abstract
Thermal processing of polycrystallinesilicon (polysilicon)/SiO2/SiC metal‐oxide‐semiconductor (MOS) devices following polysilicon deposition can have an adverse effect on the electrical properties of the SiO2/SiC interface. The primary effect is a negative shift in flatband voltage caused by an increase in fixed oxide charge and interface state density. These effects can be minimized or eliminated by restricting processing temperatures to 900 °C or below following polysilicon gate deposition.Keywords
This publication has 0 references indexed in Scilit: