Theoretical calculations of Debye length, built-in potential and depletion layer width versus dopant density in a heavily doped p-n junction diode
- 1 March 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (3) , 277-285
- https://doi.org/10.1016/0038-1101(85)90007-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Comparison of band-gap shrinkage observed in luminescence from n+-Si with that from transport and optical absorption measurementsApplied Physics Letters, 1983
- Approximations for Fermi-Dirac integrals, especially the function F12(η) used to describe electron density in a semiconductorSolid-State Electronics, 1982
- The effect of position-dependent dielectric constant on the electric field and charge density in a p-n junctionJournal of Applied Physics, 1981
- Band-gap narrowing in heavily doped many-valley semiconductorsPhysical Review B, 1981
- Measurement of heavy doping parameters in silicon by electron-beam-induced currentIEEE Transactions on Electron Devices, 1980
- Empirical approximations for the Fermi energy in a semiconductor with parabolic bandsApplied Physics Letters, 1978
- Dielectric Anomaly and the Metal-Insulator Transition in-Type SiliconPhysical Review Letters, 1975
- Transition region capacitance of diffused p-n junctionsIEEE Transactions on Electron Devices, 1971