Analytical models of GaAs FET's
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (1) , 70-72
- https://doi.org/10.1109/T-ED.1985.21912
Abstract
We consider two analytical models for the calculation of the current-voltage characteristics of GaAs FET's. The first model which we call a "square law model" provides an accurate description of GaAs FETs with low pinchoff voltages (less than 2 V or so for GaAs devices with a 1-µm gate) and an approximate description of GaAs FETs with higher pinchoff voltages, The second model which we call a "complete velocity saturation" model accurately describes high pinchoff voltage devices (higher than 3 V or so for GaAs FETs with a 1-µm gate), but cosiderably overestimates the drain-to-source current in low pinchoff voltage FET's.Keywords
This publication has 0 references indexed in Scilit: