A Distributed Bragg Reflector Silicon Evanescent Laser
- 19 August 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 20 (20) , 1667-1669
- https://doi.org/10.1109/lpt.2008.2003382
Abstract
We report a distributed Bragg reflector silicon evanescent laser operating continuous wave at 1596 nm. The lasing threshold and maximum output power are 65 mA and 11 mW, respectively. The device generates open eye-diagrams under direct modulation at data rates up to 4 Gb/s.Keywords
This publication has 7 references indexed in Scilit:
- Photonic Integration on the Hybrid Silicon Evanescent Device PlatformAdvances in Optical Technologies, 2008
- A distributed feedback silicon evanescent laserOptics Express, 2008
- Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuitOptics Express, 2007
- Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuitOptics Express, 2006
- Low temperature InP/Si wafer bondingApplied Physics Letters, 2004
- Plasma-assisted InP-to-Si low temperature wafer bondingIEEE Journal of Selected Topics in Quantum Electronics, 2002
- Optimization of modulation bandwidth in DBR lasers with detuned Bragg reflectorsIEEE Journal of Quantum Electronics, 1998