Planar n -GaAs/ N -GaAlAs microwave diodes
- 3 January 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (1) , 1-2
- https://doi.org/10.1049/el:19800001
Abstract
Planar microwave diodes have been fabricated from n-GaAs/N-(GaAl)As heterojunction layers grown on semi-insulating substrates by l.p.e. The diodes have successfully been used for detection and, for the first time, for down-conversion of X- and Ku-band signals, indicating that this type of diode is an attractive substitute for the Schottky-barrier diode.Keywords
This publication has 1 reference indexed in Scilit:
- Heterojunction TransistorsPublished by Elsevier ,1972