GaAs Schottky diodes with near-ideal characteristics
- 1 July 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 59 (7) , 1121-1122
- https://doi.org/10.1109/proc.1971.8344
Abstract
The I-V characteristics of some GaAs Schottky-barrier IMPATT diodes are found to be nearly ideal at operating temperatures (∼200°C). Fabricated on epitaxial n-type substrate with platinum contacts, the diodes use a truncated cone shape to avoid soft breakdown. The breakdown voltage and its temperature dependence are close to calculated values for one-sided abrupt junctions.Keywords
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