A measurement of Lorentz Angle of radiation-hard Pixel Sensors

Preprint

20 December 2000

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.physics/0012050

Abstract

Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown.

Keywords

MEASUREMENT OF LORENTZ
SENSORS IN A MAGNETIC
RADIATION HARD
PIXEL SENSORS
LORENTZ ANGLE
HARD PIXEL
SILICON
DRIFT

All Related Versions

Version 1, 2000-12-20, ArXiv
Published version: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 465 (1), 108.

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