1/f noise in HEMT-type GaAs FETs at low drain bias
- 31 May 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (5) , 385-386
- https://doi.org/10.1016/0038-1101(83)90093-x
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Metal-(n) AlGaAs-GaAs two-dimensional electron gas FETIEEE Transactions on Electron Devices, 1982